IRF6691TR1PBF vs IRF6641TR1PBF

Product Attributes

Part Number IRF6691TR1PBF IRF6641TR1PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6691TR1PBF IRF6641TR1PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 200 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 180A (Tc) 4.6A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 15A, 10V 59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 4.5 V 48 nC @ 10 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6580 pF @ 10 V 2290 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MT DIRECTFET™ MZ
Package / Case DirectFET™ Isometric MT DirectFET™ Isometric MZ