IRF6674TRPBF vs IRF6674TR1PBF

Product Attributes

Part Number IRF6674TRPBF IRF6674TR1PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6674TRPBF IRF6674TR1PBF
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13.4A (Ta), 67A (Tc) 13.4A (Ta), 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 13.4A, 10V 11mOhm @ 13.4A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 1350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.6W (Ta), 89W (Tc) 3.6W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MZ DIRECTFET™ MZ
Package / Case DirectFET™ Isometric MZ DirectFET™ Isometric MZ