IRF6665TR1 vs IRF6668TR1

Product Attributes

Part Number IRF6665TR1 IRF6668TR1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6665TR1 IRF6668TR1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 80 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V 15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V 1320 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ SH DIRECTFET™ MZ
Package / Case DirectFET™ Isometric SH DirectFET™ Isometric MZ