IRF6626TRPBF vs IRF6629TRPBF

Product Attributes

Part Number IRF6626TRPBF IRF6629TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6626TRPBF IRF6629TRPBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 72A (Tc) 29A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 16A, 10V 2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2.35V @ 250µA 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V 51 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2380 pF @ 15 V 4260 pF @ 13 V
FET Feature - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 100W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ ST DIRECTFET™ MX
Package / Case DirectFET™ Isometric ST DirectFET™ Isometric MX