IRF6621TR1PBF vs IRF6629TR1PBF

Product Attributes

Part Number IRF6621TR1PBF IRF6629TR1PBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6621TR1PBF IRF6629TR1PBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 55A (Tc) 29A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 12A, 10V 2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 4.5 V 51 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1460 pF @ 15 V 4260 pF @ 13 V
FET Feature - -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc) 2.8W (Ta), 100W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ SQ DIRECTFET™ MX
Package / Case DirectFET™ Isometric SQ DirectFET™ Isometric MX