IRF6603TR1 vs IRF6607TR1

Product Attributes

Part Number IRF6603TR1 IRF6607TR1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF6603TR1 IRF6607TR1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 92A (Tc) 27A (Ta), 94A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 7V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V 3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 4.5 V 75 nC @ 4.5 V
Vgs (Max) +20V, -12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 6590 pF @ 15 V 6930 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 3.6W (Ta), 42W (Tc) 3.6W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DIRECTFET™ MT DIRECTFET™ MT
Package / Case DirectFET™ Isometric MT DirectFET™ Isometric MT