| Part Number | IRF6602 | IRF6608 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 48A (Tc) | 13A (Ta), 55A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 11A, 10V | 9mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V | 24 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1420 pF @ 10 V | 2120 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) | 2.1W (Ta), 42W (Tc) |
| Operating Temperature | - | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | DIRECTFET™ MQ | DIRECTFET™ ST |
| Package / Case | DirectFET™ Isometric MQ | DirectFET™ Isometric ST |