| Part Number | IRF6601 | IRF6607 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 85A (Tc) | 27A (Ta), 94A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 7V |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 26A, 10V | 3.3mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 4.5 V | 75 nC @ 4.5 V |
| Vgs (Max) | ±20V | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 15 V | 6930 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) | 3.6W (Ta), 42W (Tc) |
| Operating Temperature | - | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | DIRECTFET™ MT | DIRECTFET™ MT |
| Package / Case | DirectFET™ Isometric MT | DirectFET™ Isometric MT |