IRF640L vs IRF640

Product Attributes

Part Number IRF640L IRF640
Manufacturer Vishay Siliconix STMicroelectronics
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF640L IRF640
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V 180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 1560 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta), 130W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK TO-220
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3