| Part Number | IRF630 | IRF640 |
|---|---|---|
| Manufacturer | Harris Corporation | STMicroelectronics |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.4A, 10V | 180mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V | 72 nC @ 10 V |
| Vgs (Max) | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 25 V | 1560 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | - | 125W (Tc) |
| Operating Temperature | - | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220 |
| Package / Case | TO-220-3 | TO-220-3 |