IRF630STRR vs IRF630NSTRR

Product Attributes

Part Number IRF630STRR IRF630NSTRR
Manufacturer Vishay Siliconix Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF630STRR IRF630NSTRR
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.4A, 10V 300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V 575 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3W (Ta), 74W (Tc) 82W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB