IRF620PBF-BE3 vs IRF624PBF-BE3

Product Attributes

Part Number IRF620PBF-BE3 IRF624PBF-BE3
Manufacturer Vishay Siliconix Vishay Siliconix
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF620PBF-BE3 IRF624PBF-BE3
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 250 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V 1.1Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V 260 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3