| Part Number | IRF620 | IRF620B |
|---|---|---|
| Manufacturer | Harris Corporation | Fairchild Semiconductor |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
|
|
|
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | 5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3A, 10V | 800mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V | 16 nC @ 10 V |
| Vgs (Max) | ±20V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | 390 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 70W (Tc) | 47W (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220 |
| Package / Case | TO-220-3 | TO-220-3 |