IRF620PBF vs IRF6201PBF

Product Attributes

Part Number IRF620PBF IRF6201PBF
Manufacturer Vishay Siliconix Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF620PBF IRF6201PBF
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V 2.45mOhm @ 27A, 4.5V
Vgs(th) (Max) @ Id 4V @ 250µA 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 195 nC @ 4.5 V
Vgs (Max) ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V 8555 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220AB 8-SO
Package / Case TO-220-3 8-SOIC (0.154", 3.90mm Width)