Part Number | IRF5803TR | IRF5805TR |
---|---|---|
Manufacturer | Infineon Technologies | Infineon Technologies |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Obsolete | Obsolete |
FET Type | P-Channel | P-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V | 30 V |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 112mOhm @ 3.4A, 10V | 98mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 17 nC @ 10 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | 511 pF @ 25 V |
FET Feature | - | - |
Power Dissipation (Max) | 2W (Ta) | 2W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount |
Supplier Device Package | Micro6™(TSOP-6) | Micro6™(TSOP-6) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |