IRF5803TR vs IRF5805TR

Product Attributes

Part Number IRF5803TR IRF5805TR
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF5803TR IRF5805TR
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta) 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 112mOhm @ 3.4A, 10V 98mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 511 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2W (Ta) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Micro6™(TSOP-6) Micro6™(TSOP-6)
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6