| Part Number | IRF5806 | IRF5802 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Obsolete | Obsolete |
| FET Type | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) | 900mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | 10V |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 4A, 4.5V | 1.2Ohm @ 540mA, 10V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 4.5 V | 6.8 nC @ 10 V |
| Vgs (Max) | ±20V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 594 pF @ 15 V | 88 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2W (Ta) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | Micro6™(TSOP-6) | Micro6™(TSOP-6) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |