| Part Number | IRF510PBF | IRF5210PBF |
|---|---|---|
| Manufacturer | Vishay Siliconix | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 3.4A, 10V | 60mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V | 180 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V | 2700 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 43W (Tc) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220AB |
| Package / Case | TO-220-3 | TO-220-3 |