IRF1902PBF vs IRF1902GPBF

Product Attributes

Part Number IRF1902PBF IRF1902GPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF1902PBF IRF1902GPBF
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V -
Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V 85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V 7.5 nC @ 4.5 V
Vgs (Max) ±12V -
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 15 V 310 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)