IRF150P220XKMA1 vs IRF150P221XKMA1

Product Attributes

Part Number IRF150P220XKMA1 IRF150P221XKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF150P220XKMA1 IRF150P221XKMA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 203A (Tc) 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.6V @ 265µA 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 75 V 6000 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 556W (Tc) 341W (Tc)
Operating Temperature -55°C ~ 175°C -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3