IRF1104PBF vs IRF1104LPBF

Product Attributes

Part Number IRF1104PBF IRF1104LPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF1104PBF IRF1104LPBF
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 9mOhm @ 60A, 10V 9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 93 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 170W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-262
Package / Case TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA