IRF1018EPBF vs IRF1010EPBF

Product Attributes

Part Number IRF1018EPBF IRF1010EPBF
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IRF1018EPBF IRF1010EPBF
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 79A (Tc) 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 47A, 10V 12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 50 V 3210 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3