| Part Number | IRF100P219AKMA1 | IRF100P218AKMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 203A (Tc) | 209A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V | 1.28mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 278µA | 3.8V @ 278µA |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V | 412 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12020 pF @ 50 V | 24000 pF @ 50 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 3.8W (Ta), 341W (Tc) | 3.8W (Ta), 556W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | PG-TO247-3 | PG-TO247-3 |
| Package / Case | TO-247-3 | TO-247-3 |