IPZ40N04S5L4R8ATMA1 vs IPZ40N04S5L2R8ATMA1

Product Attributes

Part Number IPZ40N04S5L4R8ATMA1 IPZ40N04S5L2R8ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPZ40N04S5L4R8ATMA1 IPZ40N04S5L2R8ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 20A, 10V 2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 17µA 2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 25 V 2800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 48W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8 PG-TSDSON-8
Package / Case 8-PowerVDFN 8-PowerVDFN