IPZ40N04S55R4ATMA1 vs IPZ40N04S58R4ATMA1

Product Attributes

Part Number IPZ40N04S55R4ATMA1 IPZ40N04S58R4ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPZ40N04S55R4ATMA1 IPZ40N04S58R4ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 20A, 10V 8.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 17µA 3.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 13.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V 771 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 48W (Tc) 34W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8 PG-TSDSON-8-32
Package / Case 8-PowerVDFN 8-PowerTDFN