IPW90R1K0C3FKSA1 vs IPW90R120C3FKSA1

Product Attributes

Part Number IPW90R1K0C3FKSA1 IPW90R120C3FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW90R1K0C3FKSA1 IPW90R120C3FKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370µA 3.5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 270 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 100 V 6800 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 89W (Tc) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3