IPW65R280C6 vs IPW60R280C6

Product Attributes

Part Number IPW65R280C6 IPW60R280C6
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW65R280C6 IPW60R280C6
Product Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 600 V
Current - Continuous Drain (Id) @ 25°C - 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id - 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs - 43 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 950 pF @ 100 V
FET Feature - -
Power Dissipation (Max) - 104W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - PG-TO247-3-41
Package / Case - TO-247-3