IPW65R080CFDFKSA1 vs IPW65R080CFDAFKSA1

Product Attributes

Part Number IPW65R080CFDFKSA1 IPW65R080CFDAFKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW65R080CFDFKSA1 IPW65R080CFDAFKSA1
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 650 V
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc) 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 17.6A, 10V 80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.76mA 4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 161 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5030 pF @ 100 V 4440 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 391W (Tc) 391W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3