IPW65R041CFDFKSA1 vs IPW65R041CFDFKSA2

Product Attributes

Part Number IPW65R041CFDFKSA1 IPW65R041CFDFKSA2
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW65R041CFDFKSA1 IPW65R041CFDFKSA2
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc) 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 100 V 8400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3