IPW60R230P6FKSA1 vs IPW60R330P6FKSA1

Product Attributes

Part Number IPW60R230P6FKSA1 IPW60R330P6FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW60R230P6FKSA1 IPW60R330P6FKSA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 16.8A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 6.4A, 10V 330mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 530µA 4.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 100 V 1010 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 126W (Tc) 93W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3