IPW60R250CPFKSA1 vs IPW50R250CPFKSA1

Product Attributes

Part Number IPW60R250CPFKSA1 IPW50R250CPFKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW60R250CPFKSA1 IPW50R250CPFKSA1
Product Status Active Not For New Designs
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 500 V
Current - Continuous Drain (Id) @ 25°C - 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id - 3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs - 36 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 1420 pF @ 100 V
FET Feature - -
Power Dissipation (Max) - 114W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - PG-TO247-3-1
Package / Case - TO-247-3