Part Number | IPW60R190P6 | IPW60R160P6 |
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Manufacturer | Infineon Technologies | Infineon Technologies |
Category | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
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Product Status | Active | Active |
FET Type | N-Channel | N-Channel |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V | 600 V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) | 23.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - | 10V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 7.6A, 10V | 160mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 630µA | 4.5V @ 750µA |
Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V | 44 nC @ 10 V |
Vgs (Max) | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 100 V | 2080 pF @ 100 V |
FET Feature | - | - |
Power Dissipation (Max) | 151W (Tc) | 176W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Through Hole |
Supplier Device Package | PG-TO247 | PG-TO247-3-41 |
Package / Case | TO-247-3 | TO-247-3 |