IPW60R080P7XKSA1 vs IPW60R180P7XKSA1

Product Attributes

Part Number IPW60R080P7XKSA1 IPW60R180P7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW60R080P7XKSA1 IPW60R180P7XKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 11.8A, 10V 180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 590µA 4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 400 V 1081 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 129W (Tc) 72W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3