IPW60R180C7XKSA1 vs IPW60R120C7XKSA1

Product Attributes

Part Number IPW60R180C7XKSA1 IPW60R120C7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW60R180C7XKSA1 IPW60R120C7XKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.3A, 10V 120mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 260µA 4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 400 V 1500 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 68W (Tc) 92W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3