IPW60R099C7 vs IPW60R099CP

Product Attributes

Part Number IPW60R099C7 IPW60R099CP
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW60R099C7 IPW60R099CP
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V 99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 490µA 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1819 pF @ 400 V 2800 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 255W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247 PG-TO247-3
Package / Case TO-247-3 TO-247-3