IPW60R070CFD7XKSA1 vs IPW60R170CFD7XKSA1

Product Attributes

Part Number IPW60R070CFD7XKSA1 IPW60R170CFD7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW60R070CFD7XKSA1 IPW60R170CFD7XKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 15.1A, 10V 170mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 760µA 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2721 pF @ 400 V 1199 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 156W (Tc) 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-21 PG-TO247-3-21
Package / Case TO-247-3 TO-247-3