IPW60R041C6FKSA1 vs IPW60R041P6FKSA1

Product Attributes

Part Number IPW60R041C6FKSA1 IPW60R041P6FKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPW60R041C6FKSA1 IPW60R041P6FKSA1
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 77.5A (Tc) 77.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 44.4A, 10V 41mOhm @ 35.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.96mA 4.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs 290 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6530 pF @ 10 V 8180 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 481W (Tc) 481W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3