IPU80R1K0CEAKMA1 vs IPU80R1K4CEAKMA1

Product Attributes

Part Number IPU80R1K0CEAKMA1 IPU80R1K4CEAKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPU80R1K0CEAKMA1 IPU80R1K4CEAKMA1
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc) 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 3.6A, 10V 1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 785 pF @ 100 V 570 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3-341 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA