IPU60R1K0CEAKMA2 vs IPU60R1K0CEAKMA1

Product Attributes

Part Number IPU60R1K0CEAKMA2 IPU60R1K0CEAKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPU60R1K0CEAKMA2 IPU60R1K0CEAKMA1
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130µA 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 100 V 280 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 61W (Tc) -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA