IPT60R150G7XTMA1 vs IPT60R050G7XTMA1

Product Attributes

Part Number IPT60R150G7XTMA1 IPT60R050G7XTMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPT60R150G7XTMA1 IPT60R050G7XTMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 5.3A, 10V 50mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 260µA 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 902 pF @ 400 V 2670 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 106W (Tc) 245W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-HSOF-8-2 PG-HSOF-8-2
Package / Case 8-PowerSFN 8-PowerSFN