IPT020N10N5ATMA1 vs IPT020N10N3ATMA1

Product Attributes

Part Number IPT020N10N5ATMA1 IPT020N10N3ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPT020N10N5ATMA1 IPT020N10N3ATMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 260A (Tc) 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 150A, 10V 2mOhm @ 150A, 10V
Vgs(th) (Max) @ Id 3.8V @ 202µA 3.5V @ 272µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 156 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 50 V 11200 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 273W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-HSOF-8-1 PG-HSOF-8-1
Package / Case 8-PowerSFN 8-PowerSFN