IPS70R950CEAKMA1 vs IPSA70R950CEAKMA1

Product Attributes

Part Number IPS70R950CEAKMA1 IPSA70R950CEAKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPS70R950CEAKMA1 IPSA70R950CEAKMA1
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc) 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V 950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150µA 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V 15.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 328 pF @ 100 V 328 pF @ 100 V
FET Feature Super Junction -
Power Dissipation (Max) 68W (Tc) 94W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3-11 PG-TO251-3-347
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak