IPSA70R900P7SAKMA1 vs IPSA70R600P7SAKMA1

Product Attributes

Part Number IPSA70R900P7SAKMA1 IPSA70R600P7SAKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPSA70R900P7SAKMA1 IPSA70R600P7SAKMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 1.1A, 10V 600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 60µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 400 V 10.5 nC @ 400 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 211 pF @ 400 V 364 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 30.5W (Tc) 43.1W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA