IPS80R2K4P7AKMA1 vs IPS80R2K0P7AKMA1

Product Attributes

Part Number IPS80R2K4P7AKMA1 IPS80R2K0P7AKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPS80R2K4P7AKMA1 IPS80R2K0P7AKMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 800mA, 10V 2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 500 V 175 pF @ 500 V
FET Feature - -
Power Dissipation (Max) 22W (Tc) 24W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3-342
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Stub Leads, IPak