IPS80R2K4P7AKMA1 vs IPS80R1K4P7AKMA1

Product Attributes

Part Number IPS80R2K4P7AKMA1 IPS80R1K4P7AKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPS80R2K4P7AKMA1 IPS80R1K4P7AKMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 800mA, 10V 1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA 3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 500 V -
FET Feature - Super Junction
Power Dissipation (Max) 22W (Tc) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3-11
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Stub Leads, IPak