IPS70R1K4P7SAKMA1 vs IPSA70R1K4P7SAKMA1

Product Attributes

Part Number IPS70R1K4P7SAKMA1 IPSA70R1K4P7SAKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPS70R1K4P7SAKMA1 IPSA70R1K4P7SAKMA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 700mA, 10V 1.4Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 10 V 4.7 nC @ 400 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 158 pF @ 400 V 158 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 22.7W (Tc) 22.7W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO251-3 PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA