IPS65R1K5CEAKMA1 vs IPS65R1K0CEAKMA1

Product Attributes

Part Number IPS65R1K5CEAKMA1 IPS65R1K0CEAKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPS65R1K5CEAKMA1 IPS65R1K0CEAKMA1
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc) 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1A, 10V 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 15.3 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V 328 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 28W (Tc) 37W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-251 TO-251
Package / Case TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak