IPS60R1K5CEAKMA1 vs IPS65R1K5CEAKMA1

Product Attributes

Part Number IPS60R1K5CEAKMA1 IPS65R1K5CEAKMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPS60R1K5CEAKMA1 IPS65R1K5CEAKMA1
Product Status Not For New Designs Obsolete
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 650 V
Current - Continuous Drain (Id) @ 25°C - 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs - 1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id - 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs - 10.5 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds - 225 pF @ 100 V
FET Feature - -
Power Dissipation (Max) - 28W (Tc)
Operating Temperature - -40°C ~ 150°C (TJ)
Mounting Type - Through Hole
Supplier Device Package - TO-251
Package / Case - TO-251-3 Stub Leads, IPak