IPP80R600P7XKSA1 vs IPP80R900P7XKSA1

Product Attributes

Part Number IPP80R600P7XKSA1 IPP80R900P7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP80R600P7XKSA1 IPP80R900P7XKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.4A, 10V 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA 3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 500 V 350 pF @ 500 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3