IPP65R190CFD7AAKSA1 vs IPP65R190CFDAAKSA1

Product Attributes

Part Number IPP65R190CFD7AAKSA1 IPP65R190CFDAAKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP65R190CFD7AAKSA1 IPP65R190CFDAAKSA1
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 6.4A, 10V 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 320µA 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 400 V 1850 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 77W (Tc) 151W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3