IPP60R280P7XKSA1 vs IPP60R080P7XKSA1

Product Attributes

Part Number IPP60R280P7XKSA1 IPP60R080P7XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
IPP60R280P7XKSA1 IPP60R080P7XKSA1
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 3.8A, 10V 80mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id 4V @ 190µA 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 51 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 761 pF @ 400 V 2180 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 53W (Tc) 129W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3